SIR826DP-T1-GE3【PDF 2/9 页】MOSFET N-CH 80V 60A POWERPAK

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SiR826DP

Vishay Siliconix

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

? V DS /T J

? V GS(th) /T J

V GS = 0 V, I D = 250 μA

I D = 250 μA

80

34

- 6.1

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = 250 μA

1.2

2.8

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 20 V

V DS = 80 V, V GS = 0 V

V DS = 80 V, V GS = 0 V, T J = 55 °C

V DS ?? 5 V, V GS = 10 V

V GS = 10 V, I D = 20 A

30

0.0040

± 100

1

10

0.0048

nA

μA

A

Drain-Source On-State Resistance a

R DS(on)

V GS = 7.5 V, I D = 20 A

0.0043

0.0052

?

V GS = 4.5 V, I D = 15 A

0.0054

0.0065

Forward Transconductance a

g fs

V DS = 10 V, I D = 20 A

80

S

Dynamic

b

Input Capacitance

C iss

2900

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

C oss

C rss

Q g

Q gs

Q gd

V DS = 40 V, V GS = 0 V, f = 1 MHz

V DS = 40 V, V GS = 10 V, I D = 20 A

V DS = 40 V, V GS = 7.5 V, I D = 20 A

V DS = 40 V, V GS = 4.5 V, I D = 20 A

1870

130

60

45.5

27.9

8.5

12

90

69

42

pF

nC

Gate Resistance

R g

f = 1 MHz

0.3

0.95

1.9

?

Turn-On Delay Time

t d(on)

12

24

Rise Time

Turn-Off Delay Time

t r

t d(off)

V DD = 40 V, R L = 2 ?

I D ? 20 A, V GEN = 10 V, R g = 1 ?

11

36

22

70

Fall Time

Turn-On Delay Time

t f

t d(on)

8

15

16

30

ns

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(off)

t f

V DD = 40 V, R L = 2 ?

I D ? 20 A, V GEN = 7.5 V, R g = 1 ?

14

36

8

28

70

16

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current a

I S

I SM

T C = 25 °C

60

100

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = 5 A

I F = 20 A, dI/dt = 100 A/μs, T J = 25 °C

0.74

65

78

25

40

1.1

130

155

V

ns

nC

ns

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 67196

S10-2761-Rev. A, 29-Nov-10

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